Abstract
A 500 dpi capacitive-type CMOS fingerprint sensor with pixel-level adaptive image enhancement scheme was discussed. It used virtually-grounded metal shields to suppress parasitic capacitances and capacitive switching networks to generate local threshold level. It was found that a 210 × 100 sensor in 0.6 μm CMOS consumed 40 mW at 5 V supply.
| Original language | English |
|---|---|
| Pages (from-to) | 282-283 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
| Issue number | SUPPL. |
| Publication status | Published - 2002 |
| Event | 2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 2002 Feb 3 → 2002 Feb 7 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering