A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors

Eun Chul Park; Jun Bo Yoon; Songcheol Hong; Euisik Yoon

A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors

Eun Chul Park, Jun Bo Yoon, Songcheol Hong, Euisik Yoon

Yonsei Advanced Science Institute

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.

Original language	English
Article number	1471487
Pages (from-to)	147-150
Number of pages	4
Journal	European Solid-State Circuits Conference
Publication status	Published - 2002
Event	28th European Solid-State Circuits Conference, ESSCIRC 2002 - Florence, Italy Duration: 2002 Sept 24 → 2002 Sept 26

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

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title = "A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors",

abstract = "We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.",

author = "Park, {Eun Chul} and Yoon, {Jun Bo} and Songcheol Hong and Euisik Yoon",

year = "2002",

language = "English",

pages = "147--150",

journal = "European Solid-State Circuits Conference",

issn = "1930-8833",

note = "28th European Solid-State Circuits Conference, ESSCIRC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

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TY - JOUR

T1 - A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors

AU - Park, Eun Chul

AU - Yoon, Jun Bo

AU - Hong, Songcheol

AU - Yoon, Euisik

PY - 2002

Y1 - 2002

N2 - We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.

AB - We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.

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M3 - Conference article

AN - SCOPUS:84893561819

SN - 1930-8833

SP - 147

EP - 150

JO - European Solid-State Circuits Conference

JF - European Solid-State Circuits Conference

M1 - 1471487

T2 - 28th European Solid-State Circuits Conference, ESSCIRC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -

A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors

Abstract

All Science Journal Classification (ASJC) codes

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