A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair

Jongsik Kim; Sangwon Han; Tae Wook Kim; Bo Eun Kim; Hyunchol Shin

doi:10.1109/ASSCC.2008.4708823

A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair

Jongsik Kim, Sangwon Han, Tae Wook Kim, Bo Eun Kim, Hyunchol Shin

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g₃ of the degenerated auxiliary FET pair while it efficiently cancels the second harmonic feedback component. 3 Realized in 0.18-μm CMOS, the proposed differential amplifier achieves 9.8 dB of power gain, +7.7 dBm of output P_1dB, and +25.8 dBm of peak OIP3. The maximum output power level with OIP3 greater than +20 dBm is extended by 7 ̃ 10 dB compared to the conventional structure adopting a source-decoupled auxiliary FET pair. The results prove that the proposed degeneration configuration is suitable for linearizing a resistively degenerated CMOS differential amplifier.

Original language	English
Title of host publication	Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008
Pages	445-448
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2008.4708823
Publication status	Published - 2008
Event	2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008 - Fukuoka, Japan Duration: 2008 Nov 3 → 2008 Nov 5

Publication series

Name	Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008

Other

Other	2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008
Country/Territory	Japan
City	Fukuoka
Period	08/11/3 → 08/11/5

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ASSCC.2008.4708823

Cite this

Kim, J., Han, S., Kim, T. W., Kim, B. E., & Shin, H. (2008). A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair. In Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008 (pp. 445-448). Article 4708823 (Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008). https://doi.org/10.1109/ASSCC.2008.4708823

@inproceedings{56ca70be6986498485eb7c87540a0752,

title = "A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair",

abstract = "A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g3 of the degenerated auxiliary FET pair while it efficiently cancels the second harmonic feedback component. 3 Realized in 0.18-μm CMOS, the proposed differential amplifier achieves 9.8 dB of power gain, +7.7 dBm of output P1dB, and +25.8 dBm of peak OIP3. The maximum output power level with OIP3 greater than +20 dBm is extended by 7{\~ } 10 dB compared to the conventional structure adopting a source-decoupled auxiliary FET pair. The results prove that the proposed degeneration configuration is suitable for linearizing a resistively degenerated CMOS differential amplifier.",

author = "Jongsik Kim and Sangwon Han and Kim, {Tae Wook} and Kim, {Bo Eun} and Hyunchol Shin",

year = "2008",

doi = "10.1109/ASSCC.2008.4708823",

language = "English",

isbn = "9781424426058",

series = "Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008",

pages = "445--448",

booktitle = "Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008",

note = "2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008 ; Conference date: 03-11-2008 Through 05-11-2008",

}

Kim, J, Han, S, Kim, TW, Kim, BE & Shin, H 2008, A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair. in Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008., 4708823, Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008, pp. 445-448, 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008, Fukuoka, Japan, 08/11/3. https://doi.org/10.1109/ASSCC.2008.4708823

A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair. / Kim, Jongsik; Han, Sangwon; Kim, Tae Wook et al.
Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008. 2008. p. 445-448 4708823 (Proceedings of 2008 IEEE Asian Solid-State Circuits Conference, A-SSCC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair

AU - Kim, Jongsik

AU - Han, Sangwon

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AU - Shin, Hyunchol

PY - 2008

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N2 - A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g3 of the degenerated auxiliary FET pair while it efficiently cancels the second harmonic feedback component. 3 Realized in 0.18-μm CMOS, the proposed differential amplifier achieves 9.8 dB of power gain, +7.7 dBm of output P1dB, and +25.8 dBm of peak OIP3. The maximum output power level with OIP3 greater than +20 dBm is extended by 7 ̃ 10 dB compared to the conventional structure adopting a source-decoupled auxiliary FET pair. The results prove that the proposed degeneration configuration is suitable for linearizing a resistively degenerated CMOS differential amplifier.

AB - A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g3 of the degenerated auxiliary FET pair while it efficiently cancels the second harmonic feedback component. 3 Realized in 0.18-μm CMOS, the proposed differential amplifier achieves 9.8 dB of power gain, +7.7 dBm of output P1dB, and +25.8 dBm of peak OIP3. The maximum output power level with OIP3 greater than +20 dBm is extended by 7 ̃ 10 dB compared to the conventional structure adopting a source-decoupled auxiliary FET pair. The results prove that the proposed degeneration configuration is suitable for linearizing a resistively degenerated CMOS differential amplifier.

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A 2.4-GHz CMOS resistively degenerated differential amplifier linearized using source coupled auxiliary FET pair

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