TY - GEN
T1 - A 2.1Mpixel 120frame/s CMOS image sensor with column-parallel ΔΣ ADC architecture
AU - Chae, Youngcheol
AU - Cheon, Jimin
AU - Lim, Seunghyun
AU - Lee, Dongmyung
AU - Kwon, Minho
AU - Yoo, Kwisung
AU - Jung, Wunki
AU - Lee, Dong Hun
AU - Ham, Seogheon
AU - Han, Gunhee
PY - 2010
Y1 - 2010
N2 - Over the last few years, the demands for high-density and high-speed imaging have increased drastically. Since CMOS image sensors have the advantages of low power consumption and easy system integration, they have become dominant over CCDs in the consumer market [1-4]. A column-parallel ADC architecture is the most widely used ADC in CMOS image sensors for high-speed and low-power operation [2-6]. The column-parallel architecture can be classified as: successive-approximation register (SAR) [2], cyclic [3], single-slope (SS) [4], and delta-sigma (ΔΣ) [5,6] ADCs. Although SAR ADCs have been utilized for high-speed imaging, such as UDTV, they require a DAC in a column, whose area is unacceptably large for consumer electronics with a fine pixel pitch. Cyclic ADCs have also been reported in high-speed imaging, but they have high power consumption and high noise levels. Since SS ADCs provide relatively high resolution with minimum area, they have been widely used in CMOS image sensors. However, SS ADCs require very fast clock signals leading to high power consumption in the case of high-speed imaging. Although ΔΣ ADCs have been investigated for low-noise imaging, they have only been applied for low-speed imaging with large pixel pitch because of the complexity of ΔΣ modulators and following decimation filters.
AB - Over the last few years, the demands for high-density and high-speed imaging have increased drastically. Since CMOS image sensors have the advantages of low power consumption and easy system integration, they have become dominant over CCDs in the consumer market [1-4]. A column-parallel ADC architecture is the most widely used ADC in CMOS image sensors for high-speed and low-power operation [2-6]. The column-parallel architecture can be classified as: successive-approximation register (SAR) [2], cyclic [3], single-slope (SS) [4], and delta-sigma (ΔΣ) [5,6] ADCs. Although SAR ADCs have been utilized for high-speed imaging, such as UDTV, they require a DAC in a column, whose area is unacceptably large for consumer electronics with a fine pixel pitch. Cyclic ADCs have also been reported in high-speed imaging, but they have high power consumption and high noise levels. Since SS ADCs provide relatively high resolution with minimum area, they have been widely used in CMOS image sensors. However, SS ADCs require very fast clock signals leading to high power consumption in the case of high-speed imaging. Although ΔΣ ADCs have been investigated for low-noise imaging, they have only been applied for low-speed imaging with large pixel pitch because of the complexity of ΔΣ modulators and following decimation filters.
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U2 - 10.1109/ISSCC.2010.5433974
DO - 10.1109/ISSCC.2010.5433974
M3 - Conference contribution
AN - SCOPUS:77952114328
SN - 9781424460342
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 394
EP - 395
BT - 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010 - Digest of Technical Papers
T2 - 2010 IEEE International Solid-State Circuits Conference, ISSCC 2010
Y2 - 7 February 2010 through 11 February 2010
ER -