A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Ki Chul Chun; Jae Yoon Sim; Hongil Yoon; Hyun Seok Lee; Sang Pyo Hong; Kyu Chan Lee; Jei Hwan Yoo; Dong Il Seo

doi:10.1016/j.cap.2003.09.008

A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Ki Chul Chun, Jae Yoon Sim, Hongil Yoon, Hyun Seok Lee, Sang Pyo Hong, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

Original language	English
Pages (from-to)	25-29
Number of pages	5
Journal	Current Applied Physics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2003.09.008
Publication status	Published - 2004 Feb

All Science Journal Classification (ASJC) codes

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2003.09.008

Cite this

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title = "A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier",

abstract = "A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.",

keywords = "Current sense amplifier, DRAM, Low power, Low voltage, Memory, Mobile DRAM, Pumping circuit",

author = "Chun, {Ki Chul} and Sim, {Jae Yoon} and Hongil Yoon and Lee, {Hyun Seok} and Hong, {Sang Pyo} and Lee, {Kyu Chan} and Yoo, {Jei Hwan} and Seo, {Dong Il}",

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T1 - A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

AU - Chun, Ki Chul

AU - Sim, Jae Yoon

AU - Yoon, Hongil

AU - Lee, Hyun Seok

AU - Hong, Sang Pyo

AU - Lee, Kyu Chan

AU - Yoo, Jei Hwan

AU - Seo, Dong Il

PY - 2004/2

Y1 - 2004/2

N2 - A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

AB - A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

KW - Current sense amplifier

KW - DRAM

KW - Low power

KW - Low voltage

KW - Memory

KW - Mobile DRAM

KW - Pumping circuit

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A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Abstract

All Science Journal Classification (ASJC) codes

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