A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications

Keonhee Cho, Giseok Kim, Jisang Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, Taejoong Song, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents charge-recycling and charge self-saving techniques in SRAM that lower VMIN while consuming minimal read and write energies. The proposed techniques (with flying CVSS) achieve 250mV (270mV) VMIN improvements in 64-Kb SRAM using 0.080m2 LV SRAM cell on 14-nm FinFET technology.

Original languageEnglish
Title of host publication2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages214-215
Number of pages2
ISBN (Electronic)9781665497725
DOIs
Publication statusPublished - 2022
Event2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States
Duration: 2022 Jun 122022 Jun 17

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2022-June
ISSN (Print)0743-1562

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/TerritoryUnited States
CityHonolulu
Period22/6/1222/6/17

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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