A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

Zhichao Tan; Youngcheol Chae; Roel Daamen; Aurélie Humbert; Youri V. Ponomarev; Michiel A.P. Pertijs

doi:10.1109/VLSIC.2012.6243771

A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

Zhichao Tan, Youngcheol Chae, Roel Daamen, Aurélie Humbert, Youri V. Ponomarev, Michiel A.P. Pertijs

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

23 Citations (Scopus)

Abstract

A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.

Original language	English
Title of host publication	2012 Symposium on VLSI Circuits, VLSIC 2012
Pages	24-25
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIC.2012.6243771
Publication status	Published - 2012
Event	2012 Symposium on VLSI Circuits, VLSIC 2012 - Honolulu, HI, United States Duration: 2012 Jun 13 → 2012 Jun 15

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other	2012 Symposium on VLSI Circuits, VLSIC 2012
Country/Territory	United States
City	Honolulu, HI
Period	12/6/13 → 12/6/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/VLSIC.2012.6243771

Cite this

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title = "A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications",

abstract = "A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.",

author = "Zhichao Tan and Youngcheol Chae and Roel Daamen and Aur{\'e}lie Humbert and Ponomarev, {Youri V.} and Pertijs, {Michiel A.P.}",

year = "2012",

doi = "10.1109/VLSIC.2012.6243771",

language = "English",

isbn = "9781467308458",

series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",

pages = "24--25",

booktitle = "2012 Symposium on VLSI Circuits, VLSIC 2012",

note = "2012 Symposium on VLSI Circuits, VLSIC 2012 ; Conference date: 13-06-2012 Through 15-06-2012",

}

Tan, Z, Chae, Y, Daamen, R, Humbert, A, Ponomarev, YV & Pertijs, MAP 2012, A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications. in 2012 Symposium on VLSI Circuits, VLSIC 2012., 6243771, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 24-25, 2012 Symposium on VLSI Circuits, VLSIC 2012, Honolulu, HI, United States, 12/6/13. https://doi.org/10.1109/VLSIC.2012.6243771

TY - GEN

T1 - A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

AU - Tan, Zhichao

AU - Chae, Youngcheol

AU - Daamen, Roel

AU - Humbert, Aurélie

AU - Ponomarev, Youri V.

AU - Pertijs, Michiel A.P.

PY - 2012

Y1 - 2012

N2 - A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.

AB - A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.

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DO - 10.1109/VLSIC.2012.6243771

M3 - Conference contribution

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SN - 9781467308458

T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers

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BT - 2012 Symposium on VLSI Circuits, VLSIC 2012

T2 - 2012 Symposium on VLSI Circuits, VLSIC 2012

Y2 - 13 June 2012 through 15 June 2012

ER -

A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

Abstract

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Other

All Science Journal Classification (ASJC) codes

UN SDGs

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