A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area

Byungkyu Song, Taehui Na, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Ternary content addressable memory (TCAM) is widely used in high-speed searching applications. Recently, zero standby power has been in high demand for battery-powered devices such as mobile phones, Internet of Things, and wearable devices. Thus, several nonvolatile TCAM (NV-TCAM) cells have been researched to realize zero standby power. However, they suffer from low reliability in search operation. We propose a 10T-4MTJ NV-TCAM cell that significantly improves the reliability of search operation utilizing the differential sensing and positive feedback of cross-coupled PMOSs. The advantages of the proposed cell are verified by HSPICE Monte Carlo simulations using industry-compatible 45-nm model parameters. With a cell area of 2.78 \mu\text{m}^{2} (1.12 times smaller than a SRAM-based TCAM cell) and a search delay of 1 ns, the proposed cell satisfies a target search pass yield of 6\sigma (98.24% yield for an 18-Mb TCAM macro), whereas the previous cells achieved only 3.3 and 3.6\sigma.

Original languageEnglish
Article number7523965
Pages (from-to)700-729
Number of pages30
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Issue number6
Publication statusPublished - 2017 Jun

Bibliographical note

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© 2004-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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