A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique

Taeksang Song; Euisik Yoon

A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique

Taeksang Song, Euisik Yoon

Yonsei Advanced Science Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

In this paper, we present a 1 V 5.2 GHz VCO using voltage-dividing and bias-level shifting technique to prevent loaded Q-factor degradation and increase oscillation amplitude. The proposed VCO achieves a phase noise of - 115.5 dBc/Hz at 1 MHz offset from a 5.2 GHz carrier frequency with 3 mA bias current from 1.0 V power supply. Tuning range is 450 MHz by changing the control bias from 0 V to 1.0 V.

Original language	English
Title of host publication	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publication	Digest of Papers
Editors	J.D. Cressler, J. Papapolymerou
Pages	87-90
Number of pages	4
Publication status	Published - 2004
Event	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers - Atlanta, GA, United States Duration: 2004 Sept 8 → 2004 Sept 10

Publication series

Name	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Conference

Conference	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
Country/Territory	United States
City	Atlanta, GA
Period	04/9/8 → 04/9/10

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Song, T., & Yoon, E. (2004). A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique. In J. D. Cressler, & J. Papapolymerou (Eds.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers (pp. 87-90). (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Song, Taeksang ; Yoon, Euisik. / A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. editor / J.D. Cressler ; J. Papapolymerou. 2004. pp. 87-90 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

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title = "A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique",

abstract = "In this paper, we present a 1 V 5.2 GHz VCO using voltage-dividing and bias-level shifting technique to prevent loaded Q-factor degradation and increase oscillation amplitude. The proposed VCO achieves a phase noise of - 115.5 dBc/Hz at 1 MHz offset from a 5.2 GHz carrier frequency with 3 mA bias current from 1.0 V power supply. Tuning range is 450 MHz by changing the control bias from 0 V to 1.0 V.",

author = "Taeksang Song and Euisik Yoon",

year = "2004",

language = "English",

isbn = "0780387031",

series = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers",

pages = "87--90",

editor = "J.D. Cressler and J. Papapolymerou",

booktitle = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",

note = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers ; Conference date: 08-09-2004 Through 10-09-2004",

}

Song, T & Yoon, E 2004, A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique. in JD Cressler & J Papapolymerou (eds), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, pp. 87-90, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, Atlanta, GA, United States, 04/9/8.

A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique. / Song, Taeksang; Yoon, Euisik.
2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. ed. / J.D. Cressler; J. Papapolymerou. 2004. p. 87-90 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Song, Taeksang

AU - Yoon, Euisik

PY - 2004

Y1 - 2004

N2 - In this paper, we present a 1 V 5.2 GHz VCO using voltage-dividing and bias-level shifting technique to prevent loaded Q-factor degradation and increase oscillation amplitude. The proposed VCO achieves a phase noise of - 115.5 dBc/Hz at 1 MHz offset from a 5.2 GHz carrier frequency with 3 mA bias current from 1.0 V power supply. Tuning range is 450 MHz by changing the control bias from 0 V to 1.0 V.

AB - In this paper, we present a 1 V 5.2 GHz VCO using voltage-dividing and bias-level shifting technique to prevent loaded Q-factor degradation and increase oscillation amplitude. The proposed VCO achieves a phase noise of - 115.5 dBc/Hz at 1 MHz offset from a 5.2 GHz carrier frequency with 3 mA bias current from 1.0 V power supply. Tuning range is 450 MHz by changing the control bias from 0 V to 1.0 V.

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M3 - Conference contribution

AN - SCOPUS:20344386209

SN - 0780387031

T3 - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

SP - 87

EP - 90

BT - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

A2 - Cressler, J.D.

A2 - Papapolymerou, J.

T2 - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Y2 - 8 September 2004 through 10 September 2004

ER -

A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique

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