TY - GEN
T1 - A 0.75V CMOS image sensor using time-based readout circuit
AU - Cho, Kunhee
AU - Lee, Dongmyung
AU - Lee, Jeonghwan
AU - Han, Gunhee
PY - 2009
Y1 - 2009
N2 - This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.
AB - This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.
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M3 - Conference contribution
AN - SCOPUS:70449396723
SN - 9784863480018
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - 178
EP - 179
BT - 2009 Symposium on VLSI Circuits
T2 - 2009 Symposium on VLSI Circuits
Y2 - 16 June 2009 through 18 June 2009
ER -