A 0.75V CMOS image sensor using time-based readout circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)


This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Circuits
Number of pages2
Publication statusPublished - 2009
Event2009 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers


Other2009 Symposium on VLSI Circuits

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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