This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.
|Title of host publication||ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference|
|Editors||Franz Dielacher, Wolfgang Pribyl, Gernot Hueber|
|Publisher||IEEE Computer Society|
|Number of pages||4|
|Publication status||Published - 2015 Oct 30|
|Event||41st European Solid-State Circuits Conference, ESSCIRC 2015 - Graz, Austria|
Duration: 2015 Sept 14 → 2015 Sept 18
|Name||European Solid-State Circuits Conference|
|Other||41st European Solid-State Circuits Conference, ESSCIRC 2015|
|Period||15/9/14 → 15/9/18|
Bibliographical notePublisher Copyright:
© 2015 IEEE.
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering