8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS

Minsoo Choi; Zhongkai Wang; Kyoungtae Lee; Kwanseo Park; Zhaokai Liu; Ayan Biswas; Jaeduk Han; Elad Alon

doi:10.1109/ISSCC42613.2021.9366012

8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS

Minsoo Choi, Zhongkai Wang, Kyoungtae Lee, Kwanseo Park, Zhaokai Liu, Ayan Biswas, Jaeduk Han, Elad Alon

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

The ever-expanding demand for ultra-high-speed interconnects has driven the development of wireline TXs operating at >100Gb/s per lane [1]-[4]. This paper presents a PAM-4 TX achieving 200Gb/s with improved output bandwidth and output swing by minimizing the driver capacitance with pull-up current sources, multiplexing with flexible clock timing control, and employing a fully reconfigurable 5-tap FFE architecture.

Original language	English
Title of host publication	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	128-130
Number of pages	3
ISBN (Electronic)	9781728195490
DOIs	https://doi.org/10.1109/ISSCC42613.2021.9366012
Publication status	Published - 2021 Feb 13
Event	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - San Francisco, United States Duration: 2021 Feb 13 → 2021 Feb 22

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	64
ISSN (Print)	0193-6530

Conference

Conference	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021
Country/Territory	United States
City	San Francisco
Period	21/2/13 → 21/2/22

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISSCC42613.2021.9366012

Cite this

Choi, M., Wang, Z., Lee, K., Park, K., Liu, Z., Biswas, A., Han, J., & Alon, E. (2021). 8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers (pp. 128-130). Article 9366012 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC42613.2021.9366012

Choi, Minsoo ; Wang, Zhongkai ; Lee, Kyoungtae et al. / 8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS. 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 128-130 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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abstract = "The ever-expanding demand for ultra-high-speed interconnects has driven the development of wireline TXs operating at >100Gb/s per lane [1]-[4]. This paper presents a PAM-4 TX achieving 200Gb/s with improved output bandwidth and output swing by minimizing the driver capacitance with pull-up current sources, multiplexing with flexible clock timing control, and employing a fully reconfigurable 5-tap FFE architecture.",

author = "Minsoo Choi and Zhongkai Wang and Kyoungtae Lee and Kwanseo Park and Zhaokai Liu and Ayan Biswas and Jaeduk Han and Elad Alon",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 ; Conference date: 13-02-2021 Through 22-02-2021",

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Choi, M, Wang, Z, Lee, K, Park, K, Liu, Z, Biswas, A, Han, J & Alon, E 2021, 8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS. in 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers., 9366012, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 64, Institute of Electrical and Electronics Engineers Inc., pp. 128-130, 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, United States, 21/2/13. https://doi.org/10.1109/ISSCC42613.2021.9366012

8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS. / Choi, Minsoo; Wang, Zhongkai; Lee, Kyoungtae et al.
2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2021. p. 128-130 9366012 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Choi M, Wang Z, Lee K, Park K, Liu Z, Biswas A et al. 8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2021. p. 128-130. 9366012. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC42613.2021.9366012

8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

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