7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology

Jin Sung Youn, Myung Jae Lee, Kang Yeob Park, Holger Rücker, Woo Young Choi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.

Original languageEnglish
Pages (from-to)659-665
Number of pages7
Journalieice electronics express
Issue number9
Publication statusPublished - 2010 May 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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