7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology

Jin Sung Youn; Myung Jae Lee; Kang Yeob Park; Holger Rücker; Woo Young Choi

doi:10.1587/elex.7.659

7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology

Jin Sung Youn, Myung Jae Lee, Kang Yeob Park, Holger Rücker, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10^-10 at -1dBm incident optical power.

Original language	English
Pages (from-to)	659-665
Number of pages	7
Journal	ieice electronics express
Volume	7
Issue number	9
DOIs	https://doi.org/10.1587/elex.7.659
Publication status	Published - 2010 May 10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1587/elex.7.659

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abstract = "We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.",

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AU - Youn, Jin Sung

AU - Lee, Myung Jae

AU - Park, Kang Yeob

AU - Rücker, Holger

AU - Choi, Woo Young

PY - 2010/5/10

Y1 - 2010/5/10

N2 - We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.

AB - We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.

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7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology

Abstract

All Science Journal Classification (ASJC) codes

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