TY - JOUR
T1 - 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate
AU - Choi, Chang Soon
AU - Kang, Hyo Soon
AU - Kim, Dae Hyun
AU - Seo, Kwang Seok
AU - Choi, Woo Young
PY - 2003/6/15
Y1 - 2003/6/15
N2 - This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.
AB - This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.
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U2 - 10.1143/jjap.42.l658
DO - 10.1143/jjap.42.l658
M3 - Article
AN - SCOPUS:0042365049
SN - 0021-4922
VL - 42
SP - L658-L659
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 B
ER -