5.6-nm p ⁺/n junction formation for sub-0.05-μm PMOSFETs by using low-energy B ₁₀H ₁₄ ion implantation

Engineering

• Energy Engineering 100%
• Implants 60%
• Annealing 40%
• Enhanced Diffusion 40%
• Shallow Junction 40%
• Transients 40%
• Beryllium Ion 40%
• Boron Ion 40%
• Depth Profile 20%
• Surface Region 20%
• Implanted Sample 20%
• Junction Formation 20%
• Substrates 20%
• Activation 20%
• Density 20%
• Shallower 20%

Physics

• Annealing 40%
• Ion Implantation 40%
• Molecular Cluster 40%
• Transients 40%
• Secondary Ion Mass Spectrometry 20%
• Thermal Diffusion 20%
• Substrates 20%
• Act 20%
• Retarding 20%
• Sinks 20%

Material Science

• Interstitial Defect 40%