50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Chul Lae Cho, Sung Hyun Lee, Chang Hoon Lee, Dea Hyun Lee, Sang Yoon Lee, Jang Yeon Kwon, Kyung Bae Park, Jong Man Kim, Ji Sim Jung, Wan Snick Hong

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