400 element ErAs:InGaAs/InGaAlAs superlattice power generator

Gehong Zeng, Je Hyeong Bahk, John E. Bowers, Joshua M.O. Zide, Arthur C. Gossard, Yan Zhang, Rajeev Singh, Zhixi Bian, Ali Shakouri, Woochul Kim, Suzanne Singer, Arun Majumdar

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 μm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 μm thick and 200 μm × 200 μm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages8
Publication statusPublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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