2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

Ji Sim Jung; Kyung Bae Park; Myung Kwan Ryu; Sang Yoon Lee; Jong Min Kim; Jang Yeon Kwon

doi:10.1889/1.2785621

2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

Ji Sim Jung, Kyung Bae Park, Myung Kwan Ryu, Sang Yoon Lee, Jong Min Kim, Jang Yeon Kwon

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm²/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

Original language	English
Pages (from-to)	1584-1587
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	38
Issue number	1
DOIs	https://doi.org/10.1889/1.2785621
Publication status	Published - 2007
Event	2007 SID International Symposium - Long Beach, CA, United States Duration: 2007 May 23 → 2007 May 25

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1889/1.2785621

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title = "2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature",

abstract = "We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.",

author = "Jung, {Ji Sim} and Park, {Kyung Bae} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Kim, {Jong Min} and Kwon, {Jang Yeon}",

year = "2007",

doi = "10.1889/1.2785621",

language = "English",

volume = "38",

pages = "1584--1587",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

note = "2007 SID International Symposium ; Conference date: 23-05-2007 Through 25-05-2007",

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T1 - 2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

AU - Jung, Ji Sim

AU - Park, Kyung Bae

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

AU - Kim, Jong Min

AU - Kwon, Jang Yeon

PY - 2007

Y1 - 2007

N2 - We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

AB - We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

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SN - 0097-966X

VL - 38

SP - 1584

EP - 1587

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2007 SID International Symposium

Y2 - 23 May 2007 through 25 May 2007

ER -

2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

Abstract

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