2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Kwon Jang Yeon; Sim Jung Ji; Bae Park Kyung; Man Kim Jong; Lim Hyuck; Yoon Lee Sang; Min Kim Jong; Takashi Noguchi; Ho Hur Ji; Jang Jin

2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Kwon Jang Yeon, Sim Jung Ji, Bae Park Kyung, Man Kim Jong, Lim Hyuck, Yoon Lee Sang, Min Kim Jong, Takashi Noguchi, Ho Hur Ji, Jang Jin

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm²/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

Original language	English
Pages (from-to)	309-313
Number of pages	5
Journal	Proceedings of International Meeting on Information Display
Volume	2006
Publication status	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 2006 Aug 22 → 2006 Aug 25

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@article{43fafa456ad544a2981f3f791dcc3737,

title = "2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C",

abstract = "We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.",

author = "{Jang Yeon}, Kwon and Ji, {Sim Jung} and Kyung, {Bae Park} and Jong, {Man Kim} and Lim Hyuck and Sang, {Yoon Lee} and Jong, {Min Kim} and Takashi Noguchi and Ji, {Ho Hur} and Jang Jin",

year = "2006",

language = "English",

volume = "2006",

pages = "309--313",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - 2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

AU - Jang Yeon, Kwon

AU - Ji, Sim Jung

AU - Kyung, Bae Park

AU - Jong, Man Kim

AU - Hyuck, Lim

AU - Sang, Yoon Lee

AU - Jong, Min Kim

AU - Noguchi, Takashi

AU - Ji, Ho Hur

AU - Jin, Jang

PY - 2006

Y1 - 2006

N2 - We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

AB - We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

UR - http://www.scopus.com/inward/record.url?scp=33846126922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846126922&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846126922

SN - 1738-7558

VL - 2006

SP - 309

EP - 313

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this