2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Jang Yeon Kwon; Ji Sim Jung; Kyung Bae Park; Jong Man Kim; Hyuck Lim; Sang Yoon Lee; Jong Min Kim; Takashi Noguchi; Ji Ho Hur; Jin Jang

2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Jang Yeon Kwon, Ji Sim Jung, Kyung Bae Park, Jong Man Kim, Hyuck Lim, Sang Yoon Lee, Jong Min Kim, Takashi Noguchi, Ji Ho Hur, Jin Jang

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We demonstrated 2.2inch qq VGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as interdielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm²/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

Original language	English
Pages (from-to)	1333-1336
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	37
Issue number	3
Publication status	Published - 2006
Event	44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States Duration: 2006 Jun 4 → 2006 Jun 9

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C",

abstract = "We demonstrated 2.2inch qq VGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as interdielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.",

author = "Kwon, {Jang Yeon} and Jung, {Ji Sim} and Park, {Kyung Bae} and Kim, {Jong Man} and Hyuck Lim and Lee, {Sang Yoon} and Kim, {Jong Min} and Takashi Noguchi and Hur, {Ji Ho} and Jin Jang",

year = "2006",

language = "English",

volume = "37",

pages = "1333--1336",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "3",

note = "44th International Symposium, Seminar, and Exhibition, SID 2006 ; Conference date: 04-06-2006 Through 09-06-2006",

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TY - JOUR

T1 - 2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Park, Kyung Bae

AU - Kim, Jong Man

AU - Lim, Hyuck

AU - Lee, Sang Yoon

AU - Kim, Jong Min

AU - Noguchi, Takashi

AU - Hur, Ji Ho

AU - Jang, Jin

PY - 2006

Y1 - 2006

N2 - We demonstrated 2.2inch qq VGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as interdielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

AB - We demonstrated 2.2inch qq VGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as interdielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

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M3 - Conference article

AN - SCOPUS:34547608514

SN - 0097-966X

VL - 37

SP - 1333

EP - 1336

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 44th International Symposium, Seminar, and Exhibition, SID 2006

Y2 - 4 June 2006 through 9 June 2006

ER -

2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Abstract

All Science Journal Classification (ASJC) codes

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