Skip to main navigation
Skip to search
Skip to main content
Yonsei University Home
Home
Profiles
Research units
Projects
Research output
Prizes
Activities
Press/Media
Search by expertise, name or affiliation
2-D Quantum Confined Threshold Voltage Shift Model for Asymmetric Short-Channel Junctionless Quadruple-Gate FETs
Min Soo Bae,
Ilgu Yun
Department of Electrical and Electronic Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of '2-D Quantum Confined Threshold Voltage Shift Model for Asymmetric Short-Channel Junctionless Quadruple-Gate FETs'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Earth and Planetary Sciences
Model
100%
Texts
66%
Electron
33%
Threshold Voltage
33%
Electron Density
33%
Harmonic Oscillator
33%
Simulation
33%
Confinement
16%
Perturbation
16%
Quantum Wells
16%
Energy Levels
16%
Circuit
16%
Region
16%
Dimension
16%
Correction
16%
Ratio
16%
Width
16%
Height
16%
Starting
16%
Fin
16%
Physics
Model
100%
Threshold Voltage
33%
Electron Density
33%
Simulation
33%
Confinement
16%
Quantum Wells
16%
Energy Levels
16%
Circuits
16%
Region
16%
Correction
16%
Dimensions
16%
Ratios
16%
Width
16%
Starting
16%
Chemistry
Electron Particle
33%
Electron Density
33%
Simulation
33%
Potential
33%
Device
33%
Asymmetry
16%
Subband
16%
Electron Energy Level
16%
Density
16%
Dimension
16%
Harmonic Oscillator
16%