(100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs

L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, X. C. Zhang, S. K. Chang, A. V. Nurmikko

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


This letter reports the first growth of (100) CdTe-CdMnTe superlattices. In the past (111) superlattices of CdTe-CdMnTe were grown on (100) GaAs substrates. To consistently achieve the desired (100) epitaxy, three different growth techniques are described. Reflection high-energy electron diffraction is used to observe the initial nucleation of the (100) CdTe film, while transmission electron microscopy is used to investigate the nature of the interface between the epitaxial film and the substrate. The optical properties of these superlattices show interesting differences with the (111) superlattices.

Original languageEnglish
Pages (from-to)882-884
Number of pages3
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 1985

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of '(100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs'. Together they form a unique fingerprint.

Cite this