Abstract
A prototype 1 Gbit synchronous dynamic random access memory (SDRAM) with independent array controlled isolation and decoding schemes is demonstrated. A fully working device with a size of 570 mm2 is fabricated using a 0.16 μm CMOS process. The design techniques utilizing the independent sub-array controlled scheme and the hierarchical decoding scheme to achieve enhanced failure analysis, lower power consumption, and smaller chip size, are presented.
Original language | English |
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Pages | 103-104 |
Number of pages | 2 |
Publication status | Published - 1997 |
Event | Proceedings of the 1997 Symposium on VLSI Circuits - Kyoto, Jpn Duration: 1997 Jun 12 → 1997 Jun 14 |
Other
Other | Proceedings of the 1997 Symposium on VLSI Circuits |
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City | Kyoto, Jpn |
Period | 97/6/12 → 97/6/14 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering