Research output per year
Research output per year
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Dive into the research topics where Hyunchul Sohn is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition
Jeong, J., Han, Y. & Sohn, H., 2022 Dec 15, In: Journal of Alloys and Compounds. 927, 166961.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
Electric field induced Mott transition and bipolar resistive switching in La2Ti2O7-x thin film
Wang, Y., Kim, M., Lee, C., Chabungbam, A. S., Kim, J., Lee, J., Lee, H. S., Shao, Q., Sohn, H. & Park, H. H., 2022 Mar, In: Applied Materials Today. 26, 101395.Research output: Contribution to journal › Article › peer-review
2 Citations (Scopus) -
Impact of Ag doping on subthreshold conduction in amorphous Ga2Te3 with threshold switching
Kim, J., Kang, M., Kim, W., Lee, J., Yoon, C., Joo, J. & Sohn, H., 2022 Aug 25, In: Journal of Alloys and Compounds. 913, 165176.Research output: Contribution to journal › Article › peer-review
2 Citations (Scopus) -
Reset First Resistive Switching in Ni1−x O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering
Kim, D. W., Kim, T. H., Kim, J. Y. & Sohn, H. C., 2022 Jul 1, In: Nanomaterials. 12, 13, 2231.Research output: Contribution to journal › Article › peer-review
Open Access -
Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition
Ryu, J. J., Jeon, K., Sohn, H. & Kim, G. H., 2022, In: Journal of Materials Chemistry C. 2Research output: Contribution to journal › Article › peer-review
Press/Media
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Yonsei University Details Findings in Technology (Locally Formed Conductive Filaments In an Amorphous Ga2te3 Ovonic Threshold Switching Device)
23/4/20
1 item of Media coverage
Press/Media: Press / Media
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Investigators from Yonsei University Release New Data on Atomic Layer Deposition (Effect of La Doping On Dielectric Constant and Tetragonality of Zro2 Thin Films Deposited By Atomic Layer Deposition)
23/2/23
1 item of Media coverage
Press/Media: Press / Media
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US Patent Issued to SK hynix, UIF (University Industry Foundation), Yonsei University on May 10 for "Non-volatile memory device and method of fabricating the same" (South Korean Inventors)
22/5/11
1 item of Media coverage
Press/Media: Press / Media